ALAN-408

LANCOUPLINGTRANSFORMERS

ANE408/D

24-BITDIGITALSIGNALPROCESSOR

FEATURES DigitalSignalProcessingCore •Efficient,objectcodecompatible,24-bit56000familyDSPengine •Upto16.5MillionInstructionsPerSecond(MIPS)—60.6nsinstructioncycleat33MHz •Upto99MillionOperationsPerSecond(MOPS)at33MHz •Executesa1024-pointcomplexFastFo

ETC

ANE408SLASHD

24-BITDIGITALSIGNALPROCESSOR

FEATURES DigitalSignalProcessingCore •Efficient,objectcodecompatible,24-bit56000familyDSPengine •Upto16.5MillionInstructionsPerSecond(MIPS)—60.6nsinstructioncycleat33MHz •Upto99MillionOperationsPerSecond(MOPS)at33MHz •Executesa1024-pointcomplexFastFo

ETC

AOD408

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAOD408isPb-free(meetsROHS&Sony259specifications).AOD408LisaGreenProductorder

AOD408

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

AOD408L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAOD408isPb-free(meetsROHS&Sony259specifications).AOD408LisaGreenProductorder

AOI408

N-Channel30-V(D-S)MOSFET

AOI408

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOU408

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU408usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardProductAOU408isPb-free(meetsROHS

AOU408

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=105V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D