AA1A3Q

On-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) •ComplementarytransistorwithAN1A3Q

AA1A3Q

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

FEATURES •On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) •ComplementarytransistorwithAN1A3Q

1A3

MINIATUREPLASTICSILICONRECTIFIER(VOLTAGE-50to1000VoltsCURRENT-1.0Ampere)

VOLTAGE50to1000VoltsCURRENT1.0Amperes FEATURES •Highrellability. •Lowleakage. •Lowforwardvoltagedrop. •Highcurrentcapability. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •IncompliancewithEURoHS2002/95/ECdirectives

1A3

1.0AMP.SILICONRECTIFIERS

VOLTAGERANGE50to1000Volts CURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

1A3

1.0AMINIATURESILICONRECTIFIER

Features ●DiffusedJunction ●LowForwardVoltageDrop ●HighCurrentCapability ●HighReliability ●HighSurgeCurrentCapability

1A3

SILICONRECTIFIER

ReverseVoltage-50to1000VoltsForwardCurrent-1.0Ampere FEATURES *Highrelliability *Lowleakage *Lowforwardvoltagedrop *Highcurrentcapability

1A3

SILICONRECTIFIER

1A3

TECHNICALSPECIFICATIONSOFSILICONRECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-1.0Ampere FEATURES *Highreliability *Lowleakage *Lowforwardvoltagedrop *Highcurrentcapability

1A3

1.0AMPSILICONRECTIFIERS

VOLTAGERANGE50to1000Volts CURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Lowleakagecurrent *Highreliability *Highcurrentcapability1A1

1A3

1.0AMPSILICONRECTIFIERS

1A3

MINIATUREGENERALPURPOSEPLASTICRECTIFIER

ReverseVoltage-50to1500Volts ForwardCurrent-1.0Ampere Features ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ●Constructionutilizesvoid-freemoldedplastictechnique ●Lowreverseleakage ●Highreliability ●Lowleakage ●Lowforwardv

1A3

1AGENERALDIODES

ReverseVoltage50to1000VForwardCurrent1.0A Feature *PlasticpackagehasUnderwritersLaboratories FlammabilityClassification94V-0 *Constructionutilizesvoid-freemoldedplastictechnique *Lowreverseleakage *Highforwardsurgecapability *Diffusedjunction *Hightemperat

1A3

1AmpMiniaturePlasticSiliconRectifier50to1000Volts

Features ●HighReliability ●LowLeakage ●LowForwardVoltageDrop ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1 ●Polarity:IndicatedbyCathodeBand ●LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation)

1A3

PLASTICSILICONRECTIFIERS

1A3

AXIALSILASTICGUARDJUNCTIONSTANDARDRECTIFIER

VOLTAGERANGE50to1000Volts CURRENT1.0Ampere FEATURES ·Lowcoatconstruction ·Lowforwardvoltagedrop ·Lowreverseleakage ·Highforwardsurgecurrentcapability ·Hightemperaturesolderingguaranteed: 260℃/10secods/.375”(9.5mm)leadlengthat5lbs(2.3kg)tens

1A3

TECHNICALSPECIFICATIONSOFSILICONRECTIFIER

FEATURE •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed260°C/10sec/0.375leadlengthat5lbstension •Φ0.6mmleads

1A3

SILICONRECTIFIERDIODES

PRV:50-1000Volts Io:1.0Ampere FEATURES: *Highcurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop

1A3

1AmpMiniaturePlasfticSiliconRectifier50to1000Volts

Features ●HighReliability ●LowLeakage ●LowForwardVoltageDrop ●ExceedsEnvironmentalStandardsofMIL-S-19500/228 ●Case:Moldedplasticblackbody,R-1 ●Epoxy:UL94V-Orateflameretardant ●Lead:MIL-STD-202Emethod208Cguaranteed ●Polarity:IndicatedbyCathodeBand

1A3

GENERALPURPOSEPLASTICRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-1.0Ampere FEATURES •TheplasticpackagecarriesUnderwritesLaboratoryFlammabilityClassification94V-0 •Constructionutilizesvoid-freemoldedplastictechnique •Lowreverseleakage •Highforwardsurgecurrentcapability •Hightem

1A3

LEADED(THRU-HOLE)GeneralPurposeRectifiers,1to8Amps

LEADED(THRU-HOLE) GeneralPurposeRectifiers,1to8Amps