30-36 GHz GaAs MMIC Power Amplifier

Description Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15 power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography f

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ALPHA

30?6 GHz GaAs MMIC Power Amplifier

Alphaind

模塊

Astec

上传：深圳市恒达亿科技有限公司

SMD

JAE

航空电子

上传：深圳市科雨电子有限公司

DIP

Astec

上传：深圳市正纳电子有限公司