丝印：A94；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High voltage

文件：1.89467 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A94；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES High voltage

文件：1.14299 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：A94Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.81474 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：A94Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.81474 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：A94；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High voltage

文件：1.89467 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A94Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.81474 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：A94Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.81474 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR竊?PNP 竊

FEATURES Power dissipation PCM: 0.625 W （ Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：454.86 Kbytes 页数：3 Pages

JIANGSU

长电科技

TO-92 Plastic-Encapsulate Transistors

FEATURES High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipatio

文件：207.15 Kbytes 页数：2 Pages

DAYA

大亚电器

TRANSISTOR (PNP)

FEATURES High voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Tj Junction Temperatu

文件：430.68 Kbytes 页数：2 Pages

HTSEMI

金誉半导体