BAV99-Q

Marking：A7；Package：SOT23；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance:Cd≤1.5pF •Lowleakagecurrent •Reversevoltage:VR≤100V •Small

BAV99T

Marking：A7；Package：SOT-523；SWITCHING DIODE

Features ·FastSwitchingDevice(TRR

BAV99W

Marking：A7；Package：SC-70；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance:Cd≤1.5pF •Lowleakagecurrent •Reversevoltage:VR≤100V •Ve

BAV99W

Marking：A7；Package：SC-70；High-speed switching diodes

Featuresandbenefits *Highswitchingspeed:trr≤4ns *Lowleakagecurrent *SmallSMDplasticpackages *Lowcapacitance:Cd≤1.5pF *Reversevoltage:VR≤100V *AEC-Q101qualified

BAV99W-Q

Marking：A7；Package：SC-70；High-speed switching diode

1.Generaldescription High-speedswitchingdoublediode,encapsulatedinaverysmallSOT323(SC-70)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance:Cd≤1.5pF •Lowleakagecurrent •Reversevoltage:VR≤100

BAV99WT1

Marking：A7；Package：SOT-323；SC-70/SOT-323 Dual Series Switching Diode

TheBAV99WT1isasmallerpackage,equivalenttotheBAV99LT1. SuggestedApplications •ESDProtection •PolarityReversalProtection •DataLineProtection •InductiveLoadProtection •SteeringLogic

BC817RA

Marking：A7；Package：DFN1412-6；45 V, 500 mA NPN/NPN general-purpose double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •AEC-Q101qualified

BC857CQB

Marking：A7；Package：DFN1110D-3；45 V, 100 mA PNP general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC857CQB-Q

Marking：A7；Package：DFN1110D-3；45 V, 100 mA PNP general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

BCX56T

Marking：A7；Package：SC-62；80 V, 1 A NPN power bipolar transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified