丝印：A7**；Package：SOT-23；P Channel Enhancement Mode MOSFET

DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：293.04 Kbytes 页数：6 Pages

STANSON

丝印：A7**；Package：SOT-25；High-Performance, Size Saving 150-mA CMOS LDO Regulator

文件：130.74 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

丝印：A7**；Package：SOT-25；High-Performance, Size Saving 150-mA CMOS LDO Regulator

文件：181.83 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

丝印：A7***；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V ID= -4.1 A RDS(ON)

文件：297.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：A7***；Package：SOT-23；30V P-Channel MOSFET

文件：453.5 Kbytes 页数：5 Pages

AOSMD

万国半导体