128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output

General Description The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process. Features ■ Fast access times: 2.5/3.0/3.5ns ■ 128k x 36 or 256k x 18 organizations ■ CMOS technology ■ Register to r

文件：530.67 Kbytes 页数：21 Pages

AMICC

联笙电子

128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output

General Description The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process. Features ■ Fast access times: 2.5/3.0/3.5ns ■ 128k x 36 or 256k x 18 organizations ■ CMOS technology ■ Register to r

文件：530.67 Kbytes 页数：21 Pages

AMICC

联笙电子

128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output

General Description The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process. Features ■ Fast access times: 2.5/3.0/3.5ns ■ 128k x 36 or 256k x 18 organizations ■ CMOS technology ■ Register to r

文件：530.67 Kbytes 页数：21 Pages

AMICC

联笙电子

128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output

General Description The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process. Features ■ Fast access times: 2.5/3.0/3.5ns ■ 128k x 36 or 256k x 18 organizations ■ CMOS technology ■ Register to r

文件：530.67 Kbytes 页数：21 Pages

AMICC

联笙电子