A65H83181P-7中文资料欧密格光电数据手册PDF规格书

General Description

The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process.

特性 Features

■ Fast access times: 2.5/3.0/3.5ns

■ 128k x 36 or 256k x 18 organizations

■ CMOS technology

■ Register to register synchronous operation with self-timed late write

■ Single +3.3V ±5 power supply

■ Individual byte write and global write

■ HSTL input & output levels

■ Boundary scan(JTAG) IEEE 1149.1 compatible

■ Asynchronous output enable

■ Sleep mode (ZZ)

■ Programmable impedance output drivers

■ JEDEC Standard pinout and boundary scan order

■ 7 x 17 bump plastic ball grid array (PBGA) package