A64S0616G-70I中文资料欧密格光电数据手册PDF规格书

描述 Description

A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you can operate as same as the Asynchronous SRAM.

A64S16161 is a 2,097,152 Words X 16 bit asynchronous random access memory on a monolithic CMOS chip with marvelous low power consumption technology. Its low power and also low noise makes it ideal for mobile applications.

特性 Features

● Memory Cell : Dynamic memory( DRAM )

● Refresh: Completely free

● Power Down: Control by CS2( No Data Retention )

● Byte Control : Capable of single byte operation

● Power Consumption: 100μ A( Standby Current )

● Operating Temperature Range: -40’C~+85’C

● Composition:2,097,152 Word X 16 Bit

● Supply Power Voltage:2.70V to 3.30V

● Access Time: 70nS

● Access Time ( Page Access Read ): 30nS

● I/O Terminal :Input / Output Common 3-state output