A64E06161G-85I中文资料欧密格光电数据手册PDF规格书

General Description

The A64E06161 is a low operating current 16,777,216-bit super RAM organized as 1,048,576 word by 16bit and operated on low power supply voltage from 1.7V to 1.95V. It is built using AMIC’s high performance CMOS DRAM process.

Using hidden refresh technique, the A64E06161 provides a compatible asynchronous interface and data can be read in 4-word page mode for fast access times. The A64E06161 has an internal register named the Configuration Register (CR) that controls the operation. The A64E06161 is designed for reducing current consumption during hidden self refresh and operating through following mode: Deep Power Down (DPD) mode, Reduce Memory Size (RMS) mode, Partial Array Refresh (PAR) mode and Temperature Compensated refresh (TCR) mode.

This A64E06161 is suited for low power application such as mobile phone and PDA or other battery-operated handheld device.

特性 Features

■ Operating voltage:

VCC: 1.7V to 1.95V

VCCQ: 1.7V to VCC

■ Access times: tAA = 70ns (max.)

■ Page Access times: tPAA = 25ns (max)

■ Current:

A64E06161 series:

Operating Current (Icc1) : 15mA (max.)

Standby Current (Isb1) : 100uA (max)

Deep Power Down Standby Current (IZZ) : 10μA (max.)

■ 4-word page length

■ Support 4 distinct operation modes for reducing standby power :

Deep Power Down (DPD) mode

Reduce Memory Size (RMS) mode (4M, 8M, 12M)

Partial Array Refresh (PAR) mode (4M,8M,12M)

Temperature Compensated Refresh (TCR) mode

■ Industrial operating temperature range: -25°C to +85°C for – I

■ Available in 48-ball Mini BGA (6X8) package

■ All Pb-free (Lead-free) products are RoHS compliant