Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.73 Kbytes 页数：13 Pages

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Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：211.78 Kbytes 页数：13 Pages

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Airfast RF Power GaN Transistor

文件：292.1 Kbytes 页数：13 Pages

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Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.73 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：211.78 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：211.78 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

文件：292.1 Kbytes 页数：13 Pages

恩XP

2496-2690 MHz, 24 dBm平均值, 48 V Airfast®射频功率GaN晶体管

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