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A5G26H110N

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:200.86 Kbytes 页数:12 Pages

恩XP

恩XP

A5G26H110N

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:192.33 Kbytes 页数:11 Pages

恩XP

恩XP

A5G26H110N

Airfast RF Power GaN Transistor

文件:209.59 Kbytes 页数:11 Pages

恩XP

恩XP

A5G26H110N_V01

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:192.33 Kbytes 页数:11 Pages

恩XP

恩XP

A5G26H110N_V02

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:200.86 Kbytes 页数:12 Pages

恩XP

恩XP

A5G26H110NT4

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:200.86 Kbytes 页数:12 Pages

恩XP

恩XP

A5G26H110NT4

Airfast RF Power GaN Transistor

This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating

文件:192.33 Kbytes 页数:11 Pages

恩XP

恩XP

A5G26H110NT4

Airfast RF Power GaN Transistor

文件:209.59 Kbytes 页数:11 Pages

恩XP

恩XP

A5G26H110N

2496-2690 MHz,15 W 平均值,48 V Airfast®射频功率GaN晶体管

恩XP

恩XP

供应商型号品牌批号封装库存备注价格
恩XP
24+
N/A
68
原装原装原装
询价
恩XP
25+
6-LDFN 裸露焊盘
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
恩XP
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
恩XP
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
恩XP
25+
N/A
20948
样件支持,可原厂排单订货!
询价
恩XP
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
恩XP
25+
原厂封装
10280
询价
恩XP
21+
DFN6
54
原包标签.100%进口原装.常备现货!
询价
恩XP
3410
只做正品
询价
恩XP
500
询价
更多A5G26H110N供应商 更新时间2026-2-3 14:16:00