HSMS-2805

Marking：A5*；Package：SOT-143；Surface Mount RF Schottky Barrier Diodes

Description/Applications TheseSchottkydiodesarespecificallydesignedforbothanaloganddigitalapplications.Thisseriesoffersawiderangeofspecificationsandpackageconfigurationstogivethedesignerwideflexibility.TypicalapplicationsoftheseSchottkydiodesaremixing,detectin

IRLML2244

Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description TheIRLML2244usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

NJM8020F

Marking：A5Z；Package：SOT-23-5；LOW POWER SINGLE CHANNEL OP-AMPS

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to125℃ ●InputOffsetVoltage2mVmax. ●InputOffsetVoltageDrift17μV/℃max. ●SupplyCurrent0.7mAmax. ●OperatingVoltage3Vto36Vor±1.5Vto±18V ●IntegratedEMIfilterEMIRR=84dBtyp.@f=1.8GHz ●GBW1.1MHztyp. ●GNDsens

NJM8021F

Marking：A5Y；Package：SOT-23-5；LOW POWER SINGLE CHANNEL OP-AMPS

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to125℃ ●InputOffsetVoltage2mVmax. ●InputOffsetVoltageDrift17μV/℃max. ●SupplyCurrent0.7mAmax. ●OperatingVoltage3Vto36Vor±1.5Vto±18V ●IntegratedEMIfilterEMIRR=84dBtyp.@f=1.8GHz ●GBW1.1MHztyp. ●GNDsens

NJM8190F

Marking：A5V；Package：SOT-23-5；Single Channel Low power Comparator

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to+125℃ ●InputOffsetVoltage3mVmax. ●SupplyCurrent0.5mAmax. ●OperatingVoltage+2Vto+36Vor±1Vto±18V ●IntegratedEMIfilter ●Low-levelOutputVoltage80mVtyp.(Isink=4mA) ●ResponseTime1.3μstyp. ●OpenCollectorO

NJM8191F

Marking：A5U；Package：SOT-23-5；Single Channel Low power Comparator

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to+125℃ ●InputOffsetVoltage3mVmax. ●SupplyCurrent0.5mAmax. ●OperatingVoltage+2Vto+36Vor±1Vto±18V ●IntegratedEMIfilter ●Low-levelOutputVoltage80mVtyp.(Isink=4mA) ●ResponseTime1.3μstyp. ●OpenCollectorO

NTR3A30PZ

Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description TheNTR3A30PZusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

PJA3415AE-AU_R1_000A1

Marking：A5AE；Package：SOT-23；20V P-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@-4.5V,ID@-4.3A

PMV27UPEA

Marking：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyPMV27UPEA GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

PZTA56

Marking：A56；Package：SOT-223；PNP General Purpose Transistor

■Features ●Powerdissipation：PC=1W ●Collectorcurrent(DC)：IC=500mA ●ComplementaryNPNTypeAvailable(PZTA06)