PMEG3005EH-Q

Marking：A4；Package：SOD123F；30 V, 0.5 A very low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotectionencapsulatedinasmallSOD123FSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Fla

PMEG3020BEP

Marking：A4；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤3

PMEG3020BEP-Q

Marking：A4；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤3

PMEG6020EPA-Q

Marking：A4；Package：SOT1061；60 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin anultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmedium powercapability. 2.Featuresandbenefits •Averageforwardcurrent:I

PMN22XN

Marking：A4；Package：SOT457；30 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Lowthresholdvoltage Veryfastswitching TrenchMOSFETtechnology 1.3Appl

PTVS6V5S1UR

Marking：A4；Package：SOD123W；400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto

PTVS6V5S1UR-Q

Marking：A4；Package：SOD123W；400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=400W(350Wfor3V3) •Reve

SDA2411P1

Marking：A4；Package：DFN1006；1-Line Bi-directional TVS Diode

Features ●Ultrasmallpackage:1.0x0.6x0.5mm ●Protectsonedataorpowerline ●Ultralowleakage:nAlevel ●Workingvoltage:24V ●Lowclampingvoltage ●2-Pinleadlesspackage ●Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV

SP24-01WTG-C-HV

Marking：A4；Package：DFN1006；1-Line Bi-directional TVS Diode

Features Ultrasmallpackage:1.0x0.6x0.5mm Protectsonedataorpowerline Ultralowleakage:nAlevel Workingvoltage:24V Lowclampingvoltage 2-Pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±25kV –

SPHV24-01KTG

Marking：A4；Package：DFN1006；1-Line Bi-directional TVS Diode

Features Ultrasmallpackage:1.0x0.6x0.5mm Protectsonedataorpowerline Ultralowleakage:nAlevel Workingvoltage:24V Lowclampingvoltage 2-Pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±25kV –