BAV70W-CAR

Marking：A4；Package：SOT-323；Silicon Epitaxial Planar Switching Diode

Features •Fastswitchingdiode •Ultrasmallsurfacemountpackage •-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrol changerequirements;AEC-Q101qualifiedandPPAPcapable

BAV70W-Q

Marking：A4；Package：SC-70；High-speed switching double diode

1.Generaldescription High-speedswitchingdoublediode,encapsulatedinaverysmallSOT323(SC-70)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance:Cd≤1.5pF •Lowleakagecurrent •Reversevoltage:VR≤100

BAV74

Marking：A4；Package：SOT-23；Silicon Epitaxial Planar Diode

Features ●Smallpackage ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

BC847CQB

Marking：A4；Package：SOT8015；45 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC847CQB-Q

Marking：A4；Package：SOT8015；45 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

BCX53T

Marking：A4；Package：SC-62；80 V, 1 A PNP power bipolar transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BFU540

Marking：A4；Package：SOT-343R；NPN SiGe wideband transistor

DESCRIPTION NPNSiGewidebandtransistorforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Verylownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance •45GHzSiGeprocess. APPLICATI

BGSA144ML10

Marking：A4；Package：TSLP-10-3；BGSA144ML10

Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI

BGSA144ML10

Marking：A4；Package：TSLP-10-3；Ultra high RF voltage antenna tuning SP4T

Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI

BZX884-B3V3

Marking：A4；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance