A3G26H501W17S中文资料Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V数据手册恩XP规格书

描述 Description

The A3G26H501W17S 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

特性 Features

• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• RoHS compliant