Airfast RF Power GaN Transistor, 1805-2200 MHz, 56 W Avg., 48 V

This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.\nThis part is characterized and performance is guaranteed for applications o \n• High terminal impedances for optimal broadband performance\n• Advanced high performance in-package Doherty\n• Improved linearized error vector magnitude with next generation signal\n• Able to withstand extremely high output VSWR and broadband operating conditions\n• RoHs compliant;

恩XP

RF Power GaN Transistor

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恩XP

SMD

Taiyo Yuden/太诱

上传：深圳市锐隆电子有限公司

SMD

Taiyo Yuden/太诱

上传：深圳市锐隆电子有限公司

TQFP100

MICROCHIP/微芯

上传：深圳市拓亿芯电子有限公司