N--Channel Enhancement--Mode Lateral MOSFET

文件：796.95 Kbytes 页数：16 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

文件：796.95 Kbytes 页数：16 Pages

恩XP

2300-2400 MHz, 51 W Avg., 28 V Airfast® RF Power LDMOS Transistor

The A2T23H200W23S 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. • Advanced high performance in-package Doherty\n• Designed for wide instantaneous bandwidth applications\n• Greater negative gate-source voltage range for improved Class C operation\n• Able to withstand extremely high output VSWR and broadband operating conditions\n• Designed for digital predistorti;

恩XP