N--Channel Enhancement--Mode Lateral MOSFET

文件：461.6 Kbytes 页数：16 Pages

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N--Channel Enhancement--Mode Lateral MOSFET

文件：461.6 Kbytes 页数：16 Pages

恩XP

1805-1880 MHz，28 W平均值，28 V Airfast® LDMOS射频功率晶体管

The A2T18H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. • Advanced High Performance In-Package Doherty\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant;

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