N--Channel Enhancement--Mode Lateral MOSFET

文件：854.45 Kbytes 页数：24 Pages

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N--Channel Enhancement--Mode Lateral MOSFET

文件：854.45 Kbytes 页数：24 Pages

恩XP

716-960 MHz，30 W平均值，28 V Airfast® LDMOS射频功率晶体管

The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. • Designed for Wide Instantaneous Bandwidth Applications\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant\n•;

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