Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V

The A2I25D025N wideband integrated circuit is designed with on-chip matching that makes it usable from 2100 to 2900 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. • On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant;

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RF LDMOS Wideband Integrated Power Amplifiers

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