RF LDMOS Wideband Integrated Power Amplifiers

文件：430.16 Kbytes 页数：22 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：430.16 Kbytes 页数：22 Pages

恩XP

1800-2200 MHz，13.5 W平均值，30 V Airfast® LDMOS宽带集成射频放大器

The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. • Advanced High Performance In-Package Doherty\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant;

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