RF LDMOS Wideband Integrated Power Amplifiers

文件：641.93 Kbytes 页数：21 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：641.93 Kbytes 页数：21 Pages

恩XP

1400-2200 MHz，2.5 W平均值，28 V LDMOS宽带集成射频放大器

The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats. • Extremely Wide RF Bandwidth\n• RF Decoupled Drain Pins Reduce Overall Board Space\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• RoHS Compliant;

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