RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

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RF LDMOS Wideband Integrated Power Amplifiers

文件：855.68 Kbytes 页数：23 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

文件：491.92 Kbytes 页数：23 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

文件：491.92 Kbytes 页数：23 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：855.68 Kbytes 页数：23 Pages

恩XP

575-960 MHz，4 W平均值，48 V Airfast®宽带集成射频LDMOS放大器

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. • On-chip matching (50 ohm input, DC blocked)\n• Integrated quiescent current temperature compensation with enable/disable function\n• Designed for digital predistortion error correction systems\n• Optimized for Doherty applications\n• RoHS compliant;

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