A2I09VD030N

RF LDMOS Wideband Integrated Power Amplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D

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A2I09VD030N

575-960 MHz，4 W平均值，48 V Airfast®宽带集成射频LDMOS放大器; • On-chip matching (50 ohm input, DC blocked)\n• Integrated quiescent current temperature compensation with enable/disable function\n• Designed for digital predistortion error correction systems\n• Optimized for Doherty applications\n• RoHS compliant\n;

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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A2I09VD030N

RF LDMOS Wideband Integrated Power Amplifiers

ETC

A2I09VD030N_V01

RF LDMOS Wideband Integrated Power Amplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D

ETC

A2I09VD030NR1

RF LDMOS Wideband Integrated Power Amplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D

ETC

A2I09VD030NR1

RF LDMOS Wideband Integrated Power Amplifiers

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