RF LDMOS Wideband Integrated Power Amplifiers

文件：683.3 Kbytes 页数：30 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：683.3 Kbytes 页数：30 Pages

恩XP

728-960 MHz，9 W平均值，28 V Airfast® LDMOS宽带射频集成功率放大器

The A2I08H040NR1 and A2I08H040GNR1 wideband integrated circuits are asymmetrical Doherty designed with on-chip matching that make them usable from 728 to 960 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. • Advanced High Performance In-Package Doherty\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• RoHS Compliant;

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