首页 >A11011LLHLT-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelEnhancementModePowerMOSFET Description NotebookAC-inloadswitch Batteryprotectioncharge/discharge Features VDS=100V ID=83A RDS(ON)@VGS=10V,TYP4.3mΩ RDS(ON)@VGS=6V,TYP5.2mΩ RDS(ON)@VGS=4.5V,TYP6.8mΩ | ACE ACE Technology Co., LTD. | ACE | ||
CURRENTSENSEINDUCTORS | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
POWERTRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
PowerTransistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS) PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11012 APPLICATIONS •Designedforuseasoutputdevicesincomplementary | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd. generationIGBTanddiodetechnology. •Inverteroutputcurrentcap | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
FLAT-BASETYPEINSULATEDTYPE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd. generationIGBTanddiodetechnology. •Inverteroutputcurrentcap | POWEREX Powerex Power Semiconductors | POWEREX |
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