丝印：A10；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：A10；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：A10；Package：MSOP；Low Noise, Precision 16 V CMOS, Rail-to-Rail Operational Amplifiers

FEATURES Low offset voltage: 100 μV maximum at VS = 5 V Low input bias current: 1 pA maximum Single-supply operation: 5 V to 16 V Low noise: 10 nV/√Hz Wide bandwidth: 4 MHz Unity-gain stable Small package options 3 mm × 3 mm 8-lead LFCSP 8-lead MSOP and narrow SOIC 14-lead TSSOP and narr

文件：569.73 Kbytes 页数：16 Pages

AD

亚德诺

丝印：A10；Package：MSOP；Low Noise, Precision 16 V CMOS, Rail-to-Rail Operational Amplifiers

FEATURES Low offset voltage: 100 μV maximum at VS = 5 V Low input bias current: 1 pA maximum Single-supply operation: 5 V to 16 V Low noise: 10 nV/√Hz Wide bandwidth: 4 MHz Unity-gain stable Small package options 3 mm × 3 mm 8-lead LFCSP 8-lead MSOP and narrow SOIC 14-lead TSSOP and narr

文件：569.73 Kbytes 页数：16 Pages

AD

亚德诺

丝印：A10；Package：SMT5；General purpose (dual digital transistors)

UMA10N / FMA10A / IMB17A Features 1) Two DTA113Z chips in a UMT or SMT package. UMG10N Features 1) Two DTA113Z chips in a UMT package.

文件：35.48 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：A10；Package：SOT-23；60V N-Channel MOSFET

Features VDS (V) ID RDS(ON) GS = 10V) RDS(ON) GS = 4.5V) =60V =3A 80m (V 95m (V

文件：508.95 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：A10；Package：SOT-23；60V N-Channel MOSFET

Features VDS (V)=60V ID=3A RDS(ON)

文件：328.47 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：A10；Package：VQFN-HR；TPS6286Axx and TPS6286Bxx 2.4V to 5.5V Input, 6A, 8A, and 10A, Synchronous Step-Down Converter in 2mm × 3mm QFN Package With FB/I2C Interface

1 Features • 2.4V to 5.5V input voltage range • 8mΩ and 8mΩ internal power MOSFETs • 5.1μA operating quiescent current • 1.2MHz switching frequency • 100% duty cycle mode • 0.7% output voltage accuracy • Forced PWM or power save mode • DCS-Control topology (constant on-time) • FB

文件：4.21081 Mbytes 页数：44 Pages

TI1

德州仪器

丝印：A10；Package：UMT5；General purpose (dual digital transistors)

UMA10N / FMA10A / IMB17A Features 1) Two DTA113Z chips in a UMT or SMT package. UMG10N Features 1) Two DTA113Z chips in a UMT package.

文件：35.48 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：A10；1000 WATT TVS COMPONENT

文件：454.73 Kbytes 页数：7 Pages

PROTEC