丝印：A07；Package：SOT753；Buffer with open-drain output

1. General description The 74AHC1G07 is a single buffer with open-drain output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 to 5.5 V • Overvoltage tole

文件：205.48 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A07；Package：SC-74A；Buffer with open-drain output

1. General description The 74AHC1G07-Q100 is a single buffer with open-drain output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC) standard Q

文件：204.08 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A07；Package：SC70；Low Power, Rail-to-Rail Output, Precision JFET Amplifiers

FEATURES Low supply current: 250 μA max Very low input bias current: 1 pA max Low offset voltage: 750 μV max Single-supply operation: 5 V to 26 V Dual-supply operation: ±2.5 V to ±13 V Rail-to-rail output Unity-gain stable No phase reversal SC70 package APPLICATIONS Line-/battery-powered ins

文件：321.77 Kbytes 页数：15 Pages

AD

亚德诺

丝印：A07；Package：SC70；Low Power, Rail-to-Rail Output, Precision JFET Amplifiers

FEATURES Low supply current: 250 μA max Very low input bias current: 1 pA max Low offset voltage: 750 μV max Single-supply operation: 5 V to 26 V Dual-supply operation: ±2.5 V to ±13 V Rail-to-rail output Unity-gain stable No phase reversal SC70 package APPLICATIONS Line-/battery-powered ins

文件：321.77 Kbytes 页数：15 Pages

AD

亚德诺

丝印：A07；Package：SOT-23；30V P-Channel Enhancement Mode Mosfet

Features  RDS(ON), VGS@-10V, ID@-3.8A

文件：332.45 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A07；Package：SOT-23；P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON)

文件：1.73274 Mbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：A07；Package：SOT-23；P-Channel Enhancement MOSFET

Features VDS(V)=-30V ID=-3.0A (VGS =-10V) RDS(ON)

文件：1.57048 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：A07；Package：SOT-23；30V P-Channel Enhancement-Mode MOSFET

文件：270.34 Kbytes 页数：6 Pages

FS

丝印：A07；Package：SOT23-6；P-Channel Enhancement-Mode MOSFET

文件：700.14 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：A07；Package：SOT23(TO-236)；30V P-Channel Enhancement-Mode MOSFET

文件：316.13 Kbytes 页数：5 Pages

LRC

乐山无线电