NCEA0130AG

Marking：A0130AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description TheNCEA0130AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Automotiveapplication ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Un

NJ3400

Marking：A09T；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE HighdensecelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrentcapability APPLICATION Load/PowerSwitching InterfacingSwitching

PJA3400-AU_R1_000A1

Marking：A00；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@4.9A

PJA3401-AU_R1_000A1

Marking：A01；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-3.6A

PJA3402-AU_R1_000A1

Marking：A02；Package：SOT-23；30VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@4.4A

PJA3403-AU_R1_000A1

Marking：A03；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-3.1A

PJA3403-AU_R2_000A1

Marking：A03；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-3.1A

PJA3404-AU_R1_000A1

Marking：A04；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@5.6A

PJA3404-AU_R2_000A1

Marking：A04；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@5.6A

PJA3405-AU_R1_000A1

Marking：A05；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-3.6A