N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant

文件：107.17 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

文件：959.92 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.Low Gate Charge\nCapable of 2.5V gate drive\nSingle Drive Requirement\nRoHS Compliant

APEC

富鼎先进

Lower Gate Charge, Capable of 2.5V Gate Drive

文件：71.61 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel MOSFET uses advanced trench technology

文件：628.94 Kbytes 页数：5 Pages

DOINGTER

杜因特

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant

文件：107.17 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子