| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMosfetTransistor DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelEnhancementModePowerMOSFET | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | ||
PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,9A,0.385廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET600V,9A,0.385廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSupreMOS짰MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Switchmodepowersupply | VishayVishay Siliconix 威世科技 | Vishay | ||
IRPLLNR5WideRangeInputLinearFluorescentBallast | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowersw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.75Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
替换型号
- 1741-0689
- 374110-1
- 398-8972-1
- 559510
- 569-0882-660
- 68A9040
- 7460
- 7460-6A
- 7460-9A
- 7460DC
- 7460PC
- 9N60DC
- 9N60PC
- C7460P
- DM7460J
- DM7460N
- ECG7460
- FJY101
- FJY101-7460
- HD2502
- HD2502P
- HD7460
- HD7460P
- HEPC7460P
- ITT7460N
- LB3005
- M5304
- M5304P
- M53260
- M53260P
- MB406
- MB607
- MC7460F
- MC7460L
- MC7460P
- MIC7460J
- MIC7460N
- N7460A
- N7460F
- N7460N
- NTE7460
- PA7001/533
- SFC460E
- SG7460N
- SK7460
- SN7460
- SN7460J
- SN7460N
- T7460B1
- T7460D1
- T7460D2
- TCG7460
- TD1407
- TD1407P
- TD3460A
- TD3460AP
- TD3460P
- TL7460N
- UPB210C
- UPB210D
- UPB7460C
- US7460A
- US7460J
- ZN7460E
- ZN7460F
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
23/22+ |
TO251 |
6000 |
20年老代理.原厂技术支持 |
询价 | ||
UTC/友顺 |
2021+ |
TO-220F |
68000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
23+ |
N/A |
46580 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220FP |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-220FP |
29600 |
绝对原装现货,价格优势! |
询价 | ||
MAGNACHIP/美格纳 |
23+ |
TO-220F |
50000 |
绝对原厂原装,长期优势可定货 |
询价 | ||
MAGNACHIP/美格纳 |
2023+ |
8700 |
原装现货 |
询价 | |||
MAGNACHIP/美格纳 |
23+ |
TO-220F |
6000 |
专业美格纳MOS管 |
询价 | ||
1948+ |
TO-252 |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
UTC |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 |
