丝印：99；Package：SOD523；HIGH VOLTAGE SWITCHING DIODE

Features  Fast Switching Speed: max. 50 ns  High Reverse Breakdown Voltage: 300V  Low Leakage Current: 100nA at room temperature  Ultra Small Plastic SMD Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to

文件：410.75 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：99；Package：SOD523；HIGH VOLTAGE SWITCHING DIODE

Features  Fast Switching Speed: max. 50 ns  High Reverse Breakdown Voltage: 300V  Low Leakage Current: 100nA at room temperature  Ultra Small Plastic SMD Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to

文件：309.69 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：99；Package：SOT323；Voltage regulator double diodes

FEATURES • Total power dissipation: max. 350 mW • Approx. 5 VZ tolerance • Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package.

文件：192.4 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：99；Package：SOT663；Voltage regulator double diodes

1. General description Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. 2. Features and benefits • Total power dissipation: ≤ 425 mW • Approximately 5 VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nominal 2.4 to 15 V (E24 range)

文件：275.51 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：99；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：99；Package：SOT-416；Digital transistors (built-in resistor)

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：52.44 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：99；Package：SOT-416；Digital transistors (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost c

文件：58.79 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：99；Package：SOT-346；Digital transistors (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost c

文件：58.79 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：99；Package：SOT-346；Digital transistors (built-in resistor)

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：52.44 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：99；Package：VMT3；Digital transistors (built-in resistor)

Features 1) Built-In Biasing Resistors, R1 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4)

文件：52.44 Kbytes 页数：3 Pages

ROHM

罗姆