Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

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Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These

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Complementary NPN-PNP Silicon Power Bipolar Transistors

The MJW3281A and MJW1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Features  Designed for 100 W Audio Frequency  Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A  Low Harmonic Distortion 

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IGBT

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