Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

The NXH006P120MNF2 is a power module containing an 6 m / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. Features • 6 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Options with So

文件：1.72108 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH004P120M3F2PTNG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. Features • 4 m / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These

文件：2.2608 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

F2-Half Bridge SiC MOSFET Module

文件：2.10178 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司