Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.64076 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

The NXH040F120MNF1 is a power module containing an 40 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 40 m/1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.64804 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司

BGA

MARVELL

美满

上传：深圳市华来深电子有限公司