IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

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MOSFET - N-Channel, SUPERFET II, FRFET 600 V, 76 A, 41 m

Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide supe

文件：515.28 Kbytes 页数：10 Pages

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IGBT - Field Stop, Trench 650 V, 75 A

Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features • Maxi

文件：400.77 Kbytes 页数：10 Pages

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MOSFET ??N-Channel, SUPERFET II, FRFET 650 V, 54 A, 77 m

Description SuperFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：425.08 Kbytes 页数：10 Pages

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MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on−resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

文件：668.55 Kbytes 页数：8 Pages

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IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ

文件：375.39 Kbytes 页数：10 Pages

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Ultrafast Rectifier 30 A, 600 V

Description The RURG3060−F085 is an dual ultrafast diode with soft recovery characteristics (trr

文件：488.41 Kbytes 页数：7 Pages

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MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−re

文件：406.07 Kbytes 页数：9 Pages

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SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

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IGBT - Field Stop 600 V, 60 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

文件：488.41 Kbytes 页数：11 Pages

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