ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

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ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D−Pak (TO−252), as well as the industry standard D2−Pak (TO−263), and TO−262 and TO−220 plastic packages. This device is intend

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ECOSPARK Ignition IGBT 500 mJ, 360 V, N−Channel Ignition IGBT

General Description The ISL9V5036S3ST, ISL9V5036S3ST−F085C and ISL9V5036P3−F085 are the next generation IGBTs that offer outstanding SCIS capability in the D2−Pak (TO−263) and TO−220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil driv

文件：325.34 Kbytes 页数：11 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET

文件：445.47 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

文件：392.88 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m

文件：392.96 Kbytes 页数：10 Pages

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 55 m, 47 A

文件：319.83 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 m

文件：387.27 Kbytes 页数：10 Pages

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MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

文件：601.04 Kbytes 页数：10 Pages

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