MOSFET ??Power, Single, N-Channel 40 V, 7.7 m, 45 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.87 Kbytes 页数：7 Pages

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Switch-mode Power Rectifier

These state-ofïthe-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 35 Nanosecond Recovery Time • Low Forward Voltage Drop • Low Leakage • ESD Rating:  Human Body Model = 3B (> 8 kV)  Machine Model = C (> 400

文件：197.67 Kbytes 页数：6 Pages

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ECOSPARK Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • This Device is Pb−Free and is RoHS Compliant • AEC−Q101 Qualified and PPAP Capable Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications

文件：718.26 Kbytes 页数：8 Pages

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Switch-mode Soft Ultrafast Recovery Power Rectifier Plastic DPAK Package

State−of−the−art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features • Soft Ultrafast Recovery (35 ns typ) • Highly S

文件：209.04 Kbytes 页数：7 Pages

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MOSFET ??Power, Single, N-Channel, 40 V, 3.9 m, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：234.53 Kbytes 页数：7 Pages

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MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

文件：212.67 Kbytes 页数：7 Pages

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MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

文件：272.53 Kbytes 页数：9 Pages

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Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK

NCV8408/B is a single channel protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. Thermal protection includes a latch which can be reset by toggling the input. This device

文件：251.92 Kbytes 页数：10 Pages

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EcoSPARK 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT

Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Saturation Voltage • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications

文件：222.41 Kbytes 页数：7 Pages

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Self-Protected Low Side Driver with In-Rush Current Management

The NCV8413 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain to Gate clamping for over voltage protection. The device also offers fault indication via the gate pin. This dev

文件：313.31 Kbytes 页数：12 Pages

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