MOSFET ??Power, Single N-Channel 40 V, 4.6 m, 73 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.93 Kbytes 页数：7 Pages

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Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件：231.35 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 5.8 m, 59 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：232.54 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 70 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：232.9 Kbytes 页数：7 Pages

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Switch-mode Power Rectifier DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • Low

文件：215.07 Kbytes 页数：6 Pages

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安森美半导体

Switch-mode Power Rectifiers DPAK-3 Surface Mount Package

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applicati

文件：207.24 Kbytes 页数：7 Pages

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安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 页数：11 Pages

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Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK

Features • Low RDS(on) to Minimize Conduction Losses • MSL 1/260°C • AEC Q101 Qualified and PPAP Capable • 100 Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other

文件：217.46 Kbytes 页数：8 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 16 m, 24 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：234.51 Kbytes 页数：7 Pages

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MOSFET ??Power, Single, N-Channel 40 V, 17.9 m, 22 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.09 Kbytes 页数：7 Pages

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