98AON04079D中文资料安森美半导体数据手册PDF规格书

This device employs the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

特性 Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Low Forward Voltage Drop

• NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or

Polarity Band

• Device Meets MSL1 Requirements

• ESD Ratings:

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)