Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

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Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：301.4 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

文件：204.03 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

文件：280.88 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Ultrafast Power Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Aut

文件：143.58 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：263.72 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

文件：245.21 Kbytes 页数：8 Pages

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安森美半导体

Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package

Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features • Compact Package with J−Bend Leads Ideal for Automated Handling • Stable, High Temperature, Glass Passivated Junction • NRVA Prefix for Automotive and Other Applications Requiri

文件：213.34 Kbytes 页数：7 Pages

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Power Rectifier, Ultra-Fast Recovery, Switch-mode, 1 A, 50-100 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

文件：182.68 Kbytes 页数：6 Pages

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安森美半导体

Power Rectifier, Ultra-Fast Recovery, 1 A, 600 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

文件：183.58 Kbytes 页数：6 Pages

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安森美半导体