丝印：96；Package：SOT323；Voltage regulator double diodes

FEATURES • Total power dissipation: max. 350 mW • Approx. 5 VZ tolerance • Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package.

文件：192.4 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：96；Package：SOT663；Voltage regulator double diodes

1. General description Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. 2. Features and benefits • Total power dissipation: ≤ 425 mW • Approximately 5 VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nominal 2.4 to 15 V (E24 range)

文件：275.51 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：96；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：96；Package：SOT-523；Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1only. ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

文件：98.92 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：96；Package：SOT1176-1；ESD protection for ultra high-speed interfaces

1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface (HDMI), DisplayPort, external Serial Advanced Technology Attachment (eSATA) and Low Voltage Differential Signaling (LVDS) interfaces against ElectroStati

文件：452.36 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：96；Package：DFN1610-2；1-Line Uni-directional TVS Diode

文件：1.01167 Mbytes 页数：7 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：96；Package：US2H；Schottky Barrier Diode Silicon Epitaxial

文件：246.87 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：96；Package：SOT-23；Digital Transistor

文件：127.88 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：96；Package：EMT3；-100mA / -50V Digital transistors (with built-in resistor)

文件：144.58 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：96；Package：EMT3；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

文件：1.90889 Mbytes 页数：11 Pages

ROHM

罗姆