首页 >9240LPRPQH>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET -9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.5ohm,Id=-11A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFETTRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-st | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFET FEATURES •P–CHANNELPOWERMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES | SEME-LAB Seme LAB | SEME-LAB | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFET FEATURES •P–CHANNELPOWERMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TO-254AA) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETN-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-11A) RDS(on)0.51Ω ID-11A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-12A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
12A,200V,0.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
9240LPRPQH
- 制造商：
MAXWELL
- 制造商全称：
Maxwell Technologies
- 功能描述：
14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
SMD |
3348 |
优势库存 |
询价 | ||
5000 |
公司存货 |
询价 | |||||
原厂 |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
Abbatron/HHSmith |
新 |
5 |
全新原装 货期两周 |
询价 | |||
SIX |
99+ |
SOP8S |
477 |
特价销售欢迎来电!! |
询价 | ||
SGS |
2022+ |
15 |
全新原装 货期两周 |
询价 | |||
ST |
22+ |
SMD |
66900 |
原厂原装现货 |
询价 | ||
ST |
23+ |
SMD |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
23+ |
SMD |
16900 |
正规渠道,只有原装! |
询价 | ||
SI |
SOP8 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
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