78439369082

Marking：8R2；WE-XHMA SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

78439370082

Marking：8R2；WE-XHMA SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

IPA80R1K4CE

Marking：8R1K4CE；Package：PG-TO220FullPAK；High peak current capability

Features •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications

IPB80R290C3A

Marking：8R290C3A；Package：PG-TO263-3-2；CoolMOS® Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatechargeandultraloweffectivecapacitances •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSC3Adesignedfor: •DC/DCconvertersforAutomotiv

PSMN8R0-40HL

Marking：8R0L40H；Package：LFPAK56D；N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Applica

PSMN8R5-40HS

Marking：8R5S40H；Package：LFPAK56D；N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl

PSMN8R5-60YS

Marking：8R560；Package：SOT669；N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

1.Generaldescription StandardlevelN-channelMOSFETinLFPAKpackagequalifiedto175°C.Thisproduct isdesignedandqualifiedforuseinawiderangeofindustrial,communicationsand domesticequipment. 2.Featuresandbenefits •AdvancedTrenchMOSprovideslowRDSonandlowgatecharg

BPSC000606308R2MS0

Marking：8R2；This specification applies to SMD Shielded Power Choke

IPW80R290C3A

Marking：8R290C3A；Package：PG-TO247-3；CoolMOS짰 Power Transistor

MHCI04020-8R2M-R8

Marking：8R2；Package：SMD；This specification applies to large current and low loss SMD shielding power inductor.