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NP88N055CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055CHE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

NP88N055CLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) •Lowinputcapacitance Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055CLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) •Lowinputcapacitance Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) •Lowinputcapacitance Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KHE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) •Lowinputcapacitance Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KLE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP88N055KUG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
VB
2019
SOT-263
55000
绝对原装正品假一罚十!
询价
NEC
23+
SOT-263
53200
全新原装真实库存含13点增值税票!
询价
NEC
22+
SOT-263
6000
十年配单,只做原装
询价
NEC
22+
SOT-263
25000
只做原装进口现货,专注配单
询价
VBSEMI
19+
SOT-263
29600
绝对原装现货,价格优势!
询价
17
22+
TO-262TO-263
3000
原装现货假一赔十
询价
NEC
2021+
263262
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NEC
23+
SOT-263
10000
公司只做原装正品
询价
UTC/友顺
2021+
SC59.5
100000
原装现货
询价
UTC
23/22+
SOT25
6000
20年老代理.原厂技术支持
询价
更多88N055ELE供应商 更新时间2024-5-23 14:50:00