丝印：888N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 55 m, 13 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H888NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：210.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：888N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 55 m, 13 A

文件：208.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Female mini-plus cordset

文件：133.86 Kbytes 页数：3 Pages

ALLEN-BRADLEY