丝印：87384M；Package：PTAB；CSD87384M Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90.5% System Efficiency at 25 A • Up to 30 A Operation • High Density – 5 mm x 3.5 mm LGA Footprint • Double-Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra-Low Inductance P

文件：569.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87384M；Package：PTAB；CSD87384M Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90.5% System Efficiency at 25 A • Up to 30 A Operation • High Density – 5 mm x 3.5 mm LGA Footprint • Double-Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra-Low Inductance P

文件：569.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87384M；Package：PTAB；CSD87384M Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90.5% System Efficiency at 25 A • Up to 30 A Operation • High Density – 5 mm x 3.5 mm LGA Footprint • Double-Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra-Low Inductance P

文件：569.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：87384M；Package：PTAB；CSD87384M Synchronous Buck NexFET™ Power Block II

1 Features 1• Half-Bridge Power Block • 90.5% System Efficiency at 25 A • Up to 30 A Operation • High Density – 5 mm x 3.5 mm LGA Footprint • Double-Side Cooling Capability • Ultra-Low Profile – 0.48 mm Max • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra-Low Inductance P

文件：569.4 Kbytes 页数：22 Pages

TI

德州仪器