N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：994.08 Kbytes 页数：7 Pages

VBSEMI

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications. ▼ Low Gate Charge ▼ Simple Drive Requirem

文件：179.47 Kbytes 页数：6 Pages

A-POWER

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N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：994.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：994.11 Kbytes 页数：7 Pages

VBSEMI

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NTB85N03 : Power MOSFET 85 Amps, 28 Volts

BVDSS 30V\nRDS(ON) 6mΩ\nID 75ADescription\nAP85T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power ap

APEC

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