丝印：854L；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.33 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：854L；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

文件：208.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

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文件：1.03296 Mbytes 页数：13 Pages

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文件：1.03296 Mbytes 页数：13 Pages

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文件：432.78 Kbytes 页数：13 Pages

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2 x 4 4-Pole Filters

文件：1.03296 Mbytes 页数：13 Pages

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2 X 4 4-Pole Filters

文件：432.78 Kbytes 页数：13 Pages

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