丝印：830；Package：TO-220；5A 500V N-channel Enhancement Mode Power MOSFET

文件：1.72598 Mbytes 页数：12 Pages

WXDH

东海半导体

丝印：830；Package：TO-220；5A 500V N-channel Enhancement Mode Power MOSFET

文件：1.71139 Mbytes 页数：12 Pages

WXDH

东海半导体

丝印：8300DI；Package：TSSOP(PW)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300D；Package：TSSOP(PW)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300D；Package：TSSOP(PW)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300D-Q；Package：TSSOP；DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

文件：1.25296 Mbytes 页数：26 Pages

TI

德州仪器

丝印：8300D；Package：VQFN(RGE)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300D；Package：VQFN(RGE)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300N；Package：TSSOP(PW)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器

丝印：8300N；Package：TSSOP(PW)；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

文件：2.67162 Mbytes 页数：35 Pages

TI

德州仪器